? semiconductor components industries, llc, 2010 march, 2010 ? rev. 2 1 publication order number: mjw18020/d mjw18020 npn silicon power transistors high voltage planar the mjw18020 planar high voltage power transistor is specifically designed for motor control applications, high power supplies and ups?s for which the high reproducibility of dc and switching parameters minimizes the dead time in bridge configurations. features ? high and excellent gain linearity ? fast and very tight switching times parameters t si and t fi ? very stable leakage current due to the planar structure ? high reliability ? pb ? free package is available* maximum ratings rating symbol value unit collector ? emitter sustaining voltage v ceo 450 vdc collector ? base breakdown voltage v ces 1000 vdc collector ? base voltage v cbo 1000 vdc emitter ? base voltage v ebo 9.0 vdc collector current ? continuous ? peak (note 1) i c 30 45 adc base current ? continuous ? peak (note 1) i b 6.0 10 adc total power dissipation @ t c = 25 c derate above 25 c p d 250 2.0 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.5 c/w thermal resistance, junction ? to ? ambient r ja 50 c/w maximum lead temperature for soldering purposes: 1/8? from case for 5 seconds t l 275 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 s, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mjw18020 to ? 247 30 units/rail 30 amperes 1000 volts bv ces 450 volts bv ceo, 250 watts http://onsemi.com MJW18020G to ? 247 (pb ? free) 30 units/rail to ? 247 case 340l 2 1 3 marking diagram mjw18020 aywwg a = assembly location y = year ww = work week g = pb ? free package 1 base 2 collector 3 emitter
mjw18020 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 450 ? ? vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo ? ? 100 adc collector cutoff current (v ce = rated v ces , v eb = 0) (t c = 125 c) i ces ? ? 100 500 adc emitter cutoff current (v ce = 9 vdc, i c = 0) i ebo ? ? 100 adc on characteristics dc current gain (i c = 3 adc, v ce = 5 vdc) (t c = 125 c) (i c = 10 adc v ce = 2 vdc) (t c = 125 c) (i c = 20 adc v ce = 2 vdc) (t c = 125 c) (i c = 10 madc v ce = 5 vdc) h fe 14 ? 8 5 5.5 4 14 30 16 14 9 7 25 34 ? ? ? ? ? base ? emitter saturation voltage (i c = 10 adc, i b = 2 adc) (i c = 20 adc, i b = 4 adc) v be(sat) ? 0.97 1.15 1.25 1.5 vdc collector ? emitter saturation voltage (i c = 10 adc, i b = 2 adc) (t c = 125 c) (i c = 20 adc, i b = 4 adc) (t c = 125 c) v ce(sat) ? ? ? ? 0.2 0.3 0.5 0.9 0.6 ? 1.5 2.0 vdc dynamic characteristics current gain bandwidth product (i c = 1 adc, v ce = 10 vdc, f test = 1 mhz) f t ? 13 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? 300 500 pf input capacitance (v eb = 8.0) c ib ? 7000 9000 pf switching characteristics: resistive load (d.c. = 10%, pulse width = 70 s) turn ? on time (i c = 10 adc, i b1 = i b2 = 2 adc, vcc = 125 v) t on ? 540 750 ns storage time t s ? 4.75 6 s fall time t f ? 380 500 ns turn ? off time t off ? 5.2 6.5 s turn ? on time (i c = 20 adc, i b1 = i b2 = 4 adc, vcc = 125 v) t on ? 965 1200 ns storage time t s ? 2.9 3.5 s fall time t f ? 350 500 ns turn ? off time t off ? 3.25 4 s switching characteristics: inductive load (v clamp = 300 v , vcc = 15 v, l = 200 h) fall time (i c = 10 adc, i b1 = i b2 = 2 adc) t fi ? 142 250 ns storage time t si ? 4.75 6 s crossover time t c ? 320 500 ns fall time (i c = 20 adc, i b1 = i b2 = 4 adc) t fi ? 350 500 ns storage time t si ? 3.0 3.5 s crossover time t c ? 500 750 ns
mjw18020 http://onsemi.com 3 typical characteristics figure 1. dc current gain, v ce = 2.0 v 0.01 0.1 1.0 10 1.0 10 100 100 0.0 0.1 1.0 10.0 100.0 0.001 0.01 0.1 1.0 10 10 0 0.1 1.0 10.0 0.001 0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 1.0 10 100 100 figure 2. dc current gain, v ce = 5.0 v 0.1 1.0 10.0 0.001 0.01 0.1 1.0 10 10 0 0.0 0.1 1.0 10.0 100.0 0.001 0.01 0.1 1.0 10 100 figure 3. typical collector ? emitter saturation voltage, i c /i b = 5.0 figure 4. typical collector ? emitter saturation voltage, i c /i b = 10 figure 5. typical base ? emitter saturation voltage, i c /i b = 5.0 figure 6. typical base ? emitter saturation voltage, i c /i b = 10 i c , collector current (a) i c , collector current (a) h fe , dc current gain h fe , dc current gain i c , collector current (a) i c , collector current (a) v ce , voltage (volts) v ce , voltage (volts) i c , collector current (a) v be , voltage (volts) i c , collector current (a) v be , voltage (volts) t j = 25 c t j = ? 20 c t j = 125 c t j = 25 c t j = ? 20 c t j = 125 c t j = 25 c t j = ? 20 c t j = 125 c t j = 25 c t j = ? 20 c t j = 125 c i c /i b = 10 i c /i b = 5.0 v ce = 2.0 v v ce = 5.0 v t j = 25 c i c /i b = 10 i c /i b = 5.0 t j = ? 20 c t j = 125 c t j = 25 c t j = ? 20 c t j = 125 c
mjw18020 http://onsemi.com 4 typical characteristics 0.01 0.10 1.00 10.00 100.00 10 100 1000 0 10 20 30 40 0 200 400 600 800 1000 100 1000 10000 100000 1 10 100 v ce , collector ? emitter voltage (volts) c, capacitance (pf) c ib figure 7. typical capacitance c ob v ce , collector ? emitter voltage (volts) i c , collector current (amps) dc 5 ms 1 ms 10 s 1.0 s extended soa figure 8. forward bias safe operating area v ce , collector ? emitter voltage (volts) i c , collector current (amps) figure 9. reverse bias safe operating area v be = 0 v ? 5 v ? 1.5 v t c 125 c i c /i b > 4 l c = 500 h
mjw18020 http://onsemi.com 5 package dimensions to ? 247 case 340l ? 02 issue e n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mjw18020/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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